Silicon Integrated Systems Corp. (SiS), Samsung Electronics Co., Ltd. (Samsung), ASUSTeK Computer Inc. (ASUS) and Rambus Inc. announced the cooperative development of the next-generation RDRAM-based chipset, the SiSR659, which is targeted at the performance computing and multimedia gaming markets. The R659 chipset represents the second offering from SiS?s family of RDRAM products. Incorporating high-speed interface and memory controller technology from Rambus, the R659 chipset drives four channels of 1200MHz RDRAM memory resulting in 9.6GByte/sec of memory bandwidth. This represents a 50% higher performance gain than competing dual-channel DDR chipsets. The chipset also includes architectural enhancements for higher performance through faster response time, as well as up to 16GByte of total memory capacity. The next generation RDRAM chipset achieves unmatched performance using standard commodity RIMM modules available today and already supported by the industry. This latest RDRAM solution from SiS pairs the SiSR659 with the SiS964 south bridge, which integrates USB 2.0 with up to 8 ports and Serial ATA features. "Performance is the foundation throughout all of Asus? product offerings," said Jerry Shen, Vice President at ASUS. "The 4-channel RDRAM chipset, combined with our expertise in supplying high-quality, high-performance boards, makes this an exciting solution for use with today?s fastest processors." Sample delivery of the SiSR659 is scheduled for the third quarter of 2003. Source: Silicon Integrated Systems Corp.