AMD and IBM today announced the two companies have entered into an agreement to jointly develop chip-making technologies for use in future high-performance products. The new processes, developed by AMD and IBM, will be aimed at improving microprocessor performance and reducing power consumption, and will be based on advanced structures and materials such as high-speed silicon-on-insulator (SOI) transistors, copper interconnects and improved ?low-k dielectric? insulation. The agreement includes collaboration on 65 and 45nm (nanometer; a billionth of a meter) technologies to be implemented on 300mm (millimeter) silicon wafers. "We are set to commence production of our 90nm solutions in the fourth quarter of 2003, so we are now expanding process-technology development efforts for our next generation of processors targeted at 65nm and below," said Bill Siegle, senior vice president, technology operations and chief scientist at AMD. "By collaborating with an industry leader like IBM, AMD can deliver industry-leading performance and functionality for our customers while reducing the rapidly escalating cost of technology development." AMD and IBM will be able to use the jointly-developed technologies to manufacture products in their own chip fabrication facilities and in conjunction with selected manufacturing partners. The companies expect first products based on the new 65nm technologies to appear in 2005. "Today's marketplace demands the most advanced chip designs and materials technologies," said Bijan Davari, IBM Fellow and vice president, technology and emerging products, IBM Microelectronics Division. "Our work with AMD is all about speeding our joint technologies into products, and helping reduce the time-to-market for customers." The development will be supported by AMD and IBM engineers working together in IBM?s Semiconductor Research and Development Center (SRDC) in IBM's East Fishkill, N.Y. facility. Work is expected to begin by January 30, 2003. Source: AMD